

Renesas 2SJ649-AZ
Manufacturer No:
2SJ649-AZ
Manufacturer:
Package:
TO-220-3 Isolated Tab
Description:
MOSFET (Metal Oxide) P-Channel Bulk 48m ? @ 10A, 10V ±20V 1900pF @ 10V 38nC @ 10V 60V TO-220-3 Isolated Tab
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2SJ649-AZ information
Renesas 2SJ649-AZ technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SJ649-AZ.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Contact Plating
- Tin
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Isolated Tab
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Published
- 2003
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
- Configuration
- Single
- Power Dissipation-Max
- 2W Ta 25W Tc
- Turn On Delay Time
- 10 ns
- FET Type
- P-Channel
- Rds On (Max) @ Id, Vgs
- 48m ? @ 10A, 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 1900pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 20A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 38nC @ 10V
- Drain to Source Voltage (Vdss)
- 60V
- Drive Voltage (Max Rds On,Min Rds On)
- 4V 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 17 ns
- Turn-Off Delay Time
- 73 ns
- Continuous Drain Current (ID)
- 20A
- Gate to Source Voltage (Vgs)
- 20V
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for Renesas 2SJ649-AZ.
ConflictMineralStatement:
2SJ649-AZ Overview
The maximum input capacitance of this device is 1900pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 20A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 73 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4V 10V), this device helps reduce its power consumption.
2SJ649-AZ Features
a continuous drain current (ID) of 20A
the turn-off delay time is 73 ns
a 60V drain to source voltage (Vdss)
2SJ649-AZ Applications
There are a lot of Renesas Electronics America
2SJ649-AZ applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
User Guide
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