ROHM 2SD1859TV2Q
Manufacturer No:
2SD1859TV2Q
Manufacturer:
ROHM
Package:
3-SIP
Description:
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
Quantity:
In Stock :9661
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
2SD1859TV2Q Information
ROHM 2SD1859TV2Q technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SD1859TV2Q.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- 3-SIP
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Box (TB)
- Published
- 2004
- JESD-609 Code
- e1
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- TIN SILVER COPPER
- Subcategory
- Other Transistors
- Voltage - Rated DC
- 80V
- Max Power Dissipation
- 1W
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- 700mA
- Time@Peak Reflow Temperature-Max (s)
- 10
Download datasheets and manufacturer documentation for ROHM 2SD1859TV2Q.
2SD1859TV2Q Overview
This device has a DC current gain of 120 @ 100mA 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 700mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 120MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 3A volts is possible.
2SD1859TV2Q Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 700mA
a transition frequency of 120MHz
2SD1859TV2Q Applications
There are a lot of ROHM Semiconductor
2SD1859TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
