ROHM 2SD1857TV2Q
Manufacturer No:
2SD1857TV2Q
Manufacturer:
Package:
3-SIP
Description:
NPN 150°C TJ 1?A ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
Quantity:
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2SD1857TV2Q information
ROHM 2SD1857TV2Q technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SD1857TV2Q.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- 3-SIP
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Box (TB)
- Published
- 2006
- JESD-609 Code
- e1
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- TIN SILVER COPPER
- HTS Code
- 8541.29.00.75
- Subcategory
- Other Transistors
- Voltage - Rated DC
- 120V
- Max Power Dissipation
- 1W
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- 1.5A
- Time@Peak Reflow Temperature-Max (s)
- 10
- Base Part Number
- 2SD1857
- Pin Count
- 3
- JESD-30 Code
- R-PSIP-T3
- Qualification Status
- Not Qualified
- Element Configuration
- Single
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 80MHz
- Polarity/Channel Type
- NPN
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 2V
- Max Collector Current
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 100mA 5V
- Current - Collector Cutoff (Max)
- 1?A ICBO
- Vce Saturation (Max) @ Ib, Ic
- 2V @ 100mA, 1A
- Collector Emitter Breakdown Voltage
- 120V
- Current - Collector (Ic) (Max)
- 2A
- Transition Frequency
- 80MHz
- Collector Base Voltage (VCBO)
- 120V
- Emitter Base Voltage (VEBO)
- 5V
- hFE Min
- 120
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for ROHM 2SD1857TV2Q.
2SD1857TV2Q Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 80MHz.During maximum operation, collector current can be as low as 2A volts.
2SD1857TV2Q Features
the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz
2SD1857TV2Q Applications
There are a lot of ROHM Semiconductor
2SD1857TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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