ONSEMI 2SD1815T-E

Manufacturer No:

2SD1815T-E

Manufacturer:

ONSEMI

Package:

TO-251-3 Short Leads, IPak, TO-251AA

Description:

NPN 150°C TJ 1?A ICBO 1 Elements NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

Quantity:

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In Stock :Available

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2SD1815T-E information

ONSEMI 2SD1815T-E technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2SD1815T-E.

Type
Parameter

Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)

Factory Lead Time
4 Weeks

Contact Plating
Tin

Mounting Type
Through Hole

Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

Surface Mount
NO

Number of Pins
3

Operating Temperature
150°C TJ

Packaging
Bulk

Published
2016

JESD-609 Code
e6

Pbfree Code
yes

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

ECCN Code
EAR99

Subcategory
Other Transistors

Max Power Dissipation
1W

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Frequency
130MHz

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Base Part Number
2SD1815

Pin Count
3

Number of Elements
1

Element Configuration
Single

Gain Bandwidth Product
180MHz

Polarity/Channel Type
NPN

Transistor Type
NPN

Collector Emitter Voltage (VCEO)
100V

Max Collector Current
3A

DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA 5V

Current - Collector Cutoff (Max)
1?A ICBO

Vce Saturation (Max) @ Ib, Ic
400mV @ 150mA, 1.5A

Collector Emitter Breakdown Voltage
100V

Current - Collector (Ic) (Max)
3A

Collector Emitter Saturation Voltage
150mV

Collector Base Voltage (VCBO)
120V

Emitter Base Voltage (VEBO)
6V

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for ONSEMI 2SD1815T-E.

Datasheets:

onsemiconductor-2sb1215ttlh-datasheets-2419.pdf

2SD1815T-E Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 70 @ 500mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 150mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 150mA, 1.5A.The emitter base voltage can be kept at 6V for high efficiency.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

2SD1815T-E Features

the DC current gain for this device is 70 @ 500mA 5V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V

2SD1815T-E Applications

There are a lot of ON Semiconductor
2SD1815T-E applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.