Renesas 2SD1579-T-AZ
Manufacturer No:
2SD1579-T-AZ
Manufacturer:
Renesas
Package:
3-SSIP
Description:
NPN - Darlington 150°C (TJ) 1mA 3-SSIP Through Hole
Quantity:
In Stock :3126
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Shipped from：HK Warehouse
Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2SD1579-T-AZ Information
Renesas 2SD1579-T-AZ technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SD1579-T-AZ.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- 3-SSIP
- Mfr
- Renesas
- Package
- Bulk
- Product Status
- Obsolete
- Operating Temperature
- 150°C (TJ)
- Power - Max
- 1 W
- Transistor Type
- NPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 2000 @ 1A, 2V
- Current - Collector Cutoff (Max)
- 1mA
- Type
- Parameter
- Vce Saturation (Max) @ Ib, Ic
- 1.5V @ 1mA, 1A
- Voltage - Collector Emitter Breakdown (Max)
- 80 V
- Current - Collector (Ic) (Max)
- 1.5 A
- Frequency - Transition
- 60MHz
Download datasheets and manufacturer documentation for Renesas 2SD1579-T-AZ.
2SD1579-T-AZ Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 1A, 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 80 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2SD1579-T-AZ Features
the DC current gain for this device is 2000 @ 1A, 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the supplier device package of -
2SD1579-T-AZ Applications
There are a lot of Renesas
2SD1579-T-AZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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