ROHM 2SCR544PHZGT100

Manufacturer No:

2SCR544PHZGT100

Manufacturer:

ROHM

Package:

TO-243AA

Description:

NPN 150°C (TJ) 1?A (ICBO) TO-243AA Surface Mount

Quantity:

In Stock :1809

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

2SCR544PHZGT100 Information

ROHM 2SCR544PHZGT100 technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SCR544PHZGT100.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-243AA

Supplier Device Package
SOT-89

Mfr
Rohm Semiconductor

Package
Digi-Reel?

Product Status
Active

Operating Temperature
150°C (TJ)

Power - Max
500 mW

Transistor Type
NPN

DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA, 3V

Type
Parameter

Current - Collector Cutoff (Max)
1?A (ICBO)

Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A

Voltage - Collector Emitter Breakdown (Max)
30 V

Current - Collector (Ic) (Max)
2 A

Frequency - Transition
320MHz

Download datasheets and manufacturer documentation for ROHM 2SCR544PHZGT100.

2SCR544PHZGT100 Overview

In this device, the DC current gain is 120 @ 100mA, 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 50mA, 1A.Product comes in the supplier's device package SOT-89.There is a 30 V maximal voltage in the device due to collector-emitter breakdown.