TOSHIBA 2SC6026CT-GR,L3F

Manufacturer No:

2SC6026CT-GR,L3F

Manufacturer:

TOSHIBA

Package:

SC-101, SOT-883

Description:

NPN 150°C (TJ) 100nA (ICBO) SC-101, SOT-883 Surface Mount

Quantity:

In Stock :7387

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Expected Shipping：Sun, Jun 14 - Mon, Jun 15, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

2SC6026CT-GR,L3F Information

TOSHIBA 2SC6026CT-GR,L3F technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA 2SC6026CT-GR,L3F.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
SC-101, SOT-883

Supplier Device Package
CST3

Mfr
Toshiba Semiconductor and Storage

Package
Digi-Reel?

Product Status
Active

Base Product Number
2SC6026

Operating Temperature
150°C (TJ)

Power - Max
100 mW

Transistor Type
NPN

Type
Parameter

DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V

Current - Collector Cutoff (Max)
100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA

Voltage - Collector Emitter Breakdown (Max)
50 V

Current - Collector (Ic) (Max)
100 mA

Frequency - Transition
60MHz

Download datasheets and manufacturer documentation for TOSHIBA 2SC6026CT-GR,L3F.

2SC6026CT-GR,L3F Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA, 6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.This product comes in a CST3 device package from the supplier.Device displays Collector Emitter Breakdown (50 V maximal voltage).