ROHM 2SC5880TV2Q
ROHM 2SC5880TV2Q

ROHM 2SC5880TV2Q

Manufacturer No:

2SC5880TV2Q

Manufacturer:

ROHM

Package:

3-SIP

Description:

NPN 150°C TJ 1?A ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Reel (TR) Through Hole

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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2SC5880TV2Q information

ROHM 2SC5880TV2Q technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SC5880TV2Q.

  • Type
  • Parameter
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • 3-SIP
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2011
  • JESD-609 Code
  • e1
  • Pbfree Code
  • yes
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • TIN SILVER COPPER
  • HTS Code
  • 8541.29.00.75
  • Subcategory
  • Other Transistors
  • Max Power Dissipation
  • 1W
  • Peak Reflow Temperature (Cel)
  • 260
  • Time@Peak Reflow Temperature-Max (s)
  • 10
  • Pin Count
  • 3
  • JESD-30 Code
  • R-PSIP-T3
  • Qualification Status
  • Not Qualified
  • Number of Elements
  • 1
  • Element Configuration
  • Single
  • Gain Bandwidth Product
  • 200MHz
  • Polarity/Channel Type
  • NPN
  • Transistor Type
  • NPN
  • Collector Emitter Voltage (VCEO)
  • 500mV
  • Max Collector Current
  • 2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 120 @ 100mA 2V
  • Current - Collector Cutoff (Max)
  • 1?A ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 500mV @ 100mA, 1A
  • Collector Emitter Breakdown Voltage
  • 60V
  • Current - Collector (Ic) (Max)
  • 2A
  • Transition Frequency
  • 200MHz
  • Collector Base Voltage (VCBO)
  • 60V
  • Emitter Base Voltage (VEBO)
  • 6V
  • RoHS Status
  • RoHS Compliant

Download datasheets and manufacturer documentation for ROHM 2SC5880TV2Q.

Datasheets:

2SC5880TV2Q Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 2V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 2A volts can be achieved.

2SC5880TV2Q Features


the DC current gain for this device is 120 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 200MHz


2SC5880TV2Q Applications


There are a lot of ROHM Semiconductor
2SC5880TV2Q applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

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Step6：Packaging Box

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

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