TOSHIBA 2SC5171,Q(J
Manufacturer No:
2SC5171,Q(J
Manufacturer:
TOSHIBA
Package:
TO-220-3 Full Pack
Description:
NPN 150°C TJ 5?A ICBO TO-220-3 Full Pack Bulk Through Hole
Quantity:
In Stock :3270
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Expected Shipping：Fri, Jun 12 - Sat, Jun 13, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2SC5171,Q(J Information
TOSHIBA 2SC5171,Q(J technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA 2SC5171,Q(J.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Published
- 2007
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Reach Compliance Code
- unknown
- Power - Max
- 2W
- Type
- Parameter
- Transistor Type
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 100mA 5V
- Current - Collector Cutoff (Max)
- 5?A ICBO
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max)
- 180V
- Current - Collector (Ic) (Max)
- 2A
- Frequency - Transition
- 200MHz
Download datasheets and manufacturer documentation for TOSHIBA 2SC5171,Q(J.
2SC5171,Q(J Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 100mA, 1A.Device displays Collector Emitter Breakdown (180V maximal voltage).
2SC5171,Q(J Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
2SC5171,Q(J Applications
There are a lot of Toshiba Semiconductor and Storage
2SC5171,Q(J applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
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In-stock SKU
15,000+
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