ROHM 2SC5053T100Q
Manufacturer No:
2SC5053T100Q
Manufacturer:
Package:
TO-243AA
Description:
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
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2SC5053T100Q information
ROHM 2SC5053T100Q technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SC5053T100Q.
- Type
- Parameter
- Factory Lead Time
- 7 Weeks
- Contact Plating
- Copper, Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-243AA
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2008
- JESD-609 Code
- e2
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Termination
- SMD/SMT
- ECCN Code
- EAR99
- Terminal Finish
- TIN COPPER
- HTS Code
- 8541.21.00.75
- Subcategory
- Other Transistors
- Voltage - Rated DC
- 50V
- Max Power Dissipation
- 2W
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- 1A
- Base Part Number
- 2SC5053
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 500mW
- Case Connection
- COLLECTOR
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 150MHz
- Polarity/Channel Type
- NPN
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 400mV
- Max Collector Current
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 500mA 3V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 400mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage
- 50V
- Transition Frequency
- 150MHz
- Max Breakdown Voltage
- 50V
- Collector Base Voltage (VCBO)
- 60V
- Emitter Base Voltage (VEBO)
- 5V
- hFE Min
- 120
- Continuous Collector Current
- 1A
- VCEsat-Max
- 0.4 V
- REACH SVHC
- No SVHC
Download datasheets and manufacturer documentation for ROHM 2SC5053T100Q.
PCN Design/Specification:
2SC5053T100Q Overview
DC current gain in this device equals 120 @ 500mA 3V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 1A volts.
2SC5053T100Q Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
2SC5053T100Q Applications
There are a lot of ROHM Semiconductor
2SC5053T100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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