ROHM 2SC4102T106R

Manufacturer No:

2SC4102T106R

Manufacturer:

ROHM

Package:

SC-70, SOT-323

Description:

NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount

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2SC4102T106R information

ROHM 2SC4102T106R technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SC4102T106R.

Type
Parameter

Factory Lead Time
10 Weeks

Contact Plating
Copper, Silver, Tin

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
SC-70, SOT-323

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Published
2011

JESD-609 Code
e1

Pbfree Code
yes

Part Status
Not For New Designs

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)

HTS Code
8541.21.00.75

Subcategory
Other Transistors

Voltage - Rated DC
25V

Max Power Dissipation
200mW

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
10

Base Part Number
2SC4102

Pin Count
3

Number of Elements
1

Element Configuration
Single

Transistor Application
AMPLIFIER

Gain Bandwidth Product
140MHz

Polarity/Channel Type
NPN

Transistor Type
NPN

Collector Emitter Voltage (VCEO)
120V

Max Collector Current
50mA

DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA 6V

Current - Collector Cutoff (Max)
500nA ICBO

Vce Saturation (Max) @ Ib, Ic
500mV @ 1mA, 10mA

Collector Emitter Breakdown Voltage
120V

Max Frequency
100MHz

Transition Frequency
140MHz

Collector Emitter Saturation Voltage
500mV

Max Breakdown Voltage
120V

Collector Base Voltage (VCBO)
120V

Emitter Base Voltage (VEBO)
5V

hFE Min
180

Continuous Collector Current
50mA

Download datasheets and manufacturer documentation for ROHM 2SC4102T106R.

Datasheets:

rohmsemiconductor-2sc4102t106r-datasheets-9079.pdf

2SC4102T106R Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 2mA 6V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 50mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 50mA.In the part, the transition frequency is 140MHz.This device can take an input voltage of 120V volts before it breaks down.A maximum collector current of 50mA volts can be achieved.

2SC4102T106R Features

the DC current gain for this device is 180 @ 2mA 6V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 140MHz

2SC4102T106R Applications

There are a lot of ROHM Semiconductor
2SC4102T106R applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

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