ONSEMI 2SC3646T-P-TD-E
Manufacturer No:
2SC3646T-P-TD-E
Manufacturer:
ONSEMI
Package:
TO-243AA
Description:
NPN 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount
Quantity:
In Stock :4727
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
2SC3646T-P-TD-E Information
ONSEMI 2SC3646T-P-TD-E technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2SC3646T-P-TD-E.
- Type
- Parameter
- Factory Lead Time
- 4 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-243AA
- Number of Pins
- 3
- Packaging
- Tape & Reel (TR)
- Published
- 2012
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Type
- Parameter
- Max Power Dissipation
- 500mW
- Element Configuration
- Single
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 400mV
- Max Collector Current
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 100mA 5V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 400mV @ 40mA, 400mA
- Collector Emitter Breakdown Voltage
- 100V
- Max Frequency
- 1MHz
Download datasheets and manufacturer documentation for ONSEMI 2SC3646T-P-TD-E.
ReachStatement:
2SC3646T-P-TD-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 40mA, 400mA.The emitter base voltage can be kept at 6V for high efficiency.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SC3646T-P-TD-E Features
the DC current gain for this device is 200 @ 100mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at 6V
2SC3646T-P-TD-E Applications
There are a lot of ON Semiconductor
2SC3646T-P-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
Listed Part Number
3,000+
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In-stock SKU
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