Renesas 2SC3360-T1B-A
Manufacturer No:
2SC3360-T1B-A
Manufacturer:
Renesas
Package:
Description:
HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
Quantity:
In Stock :7006
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
2SC3360-T1B-A Information
Renesas 2SC3360-T1B-A technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SC3360-T1B-A.
- Type
- Parameter
- Surface Mount
- YES
- Number of Terminals
- 3
- Transistor Element Material
- SILICON
- Package Shape
- RECTANGULAR
- Manufacturer
- Renesas Electronics Corporation
- Pbfree Code
- Yes
- Subcategory
- Other Transistors
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Type
- Parameter
- Reach Compliance Code
- compliant
- Pin Count
- 3
- JESD-30 Code
- R-PDSO-G3
- Brand Name
- Renesas
- Number of Elements
- 1
- Configuration
- SINGLE
- Transistor Application
- SWITCHING
- Polarity/Channel Type
- NPN
- Power Dissipation-Max (Abs)
- 0.2 W
- Collector Current-Max (IC)
- 0.1 A
Download datasheets and manufacturer documentation for Renesas 2SC3360-T1B-A.
Product Description:
The 2SC3360-T1B-A is a high-voltage amplifier and switching NPN silicon epitaxial transistor from Renesas Electronics Corporation. This miniature molded transistor is designed for use in a variety of applications, including switching and amplification circuits. With its small outline package and gull-wing terminals, this device offers a compact and efficient solution for designers seeking a high-performance transistor.
Features:
- High-voltage amplifier and switching NPN silicon epitaxial transistor
- Small outline package (R-PDSO-G3) with gull-wing terminals
- Dual terminals for improved flexibility and reliability
- Plastic/epoxy package body material for durability and thermal stability
- Operating temperature range of -55°C to 150°C
- Peak reflow temperature not specified
- Power dissipation of 0.2W
- Collector-emitter voltage of 200V
- Collector current of 0.1A
- Transition frequency of 160MHz
Applications:
- Switching circuits for power supplies and motor control
- Amplification circuits for audio and video applications
- High-voltage applications requiring a compact and efficient solution
Alternative Parts:
- 2SC3360-T1B-A is a high-voltage amplifier and switching NPN silicon epitaxial transistor, suitable for applications requiring a compact and efficient solution. Alternative parts may include:
- 2SC3360-T1B-A (same part number, different manufacturer)
- 2SC3360-T1B-B (different package type, same functionality)
Embedded Modules:
- This component is not typically used as an embedded module, but rather as a standalone transistor.
FAQs:
Q: What is the maximum operating temperature of the 2SC3360-T1B-A? A: The maximum operating temperature is 150°C.
Q: What is the maximum power dissipation of the 2SC3360-T1B-A? A: The maximum power dissipation is 0.2W.
Q: Is the 2SC3360-T1B-A RoHS compliant? A: Yes, the 2SC3360-T1B-A is RoHS compliant.
Q: What is the transition frequency of the 2SC3360-T1B-A? A: The transition frequency is 160MHz.
Q: Is the 2SC3360-T1B-A suitable for high-voltage applications? A: Yes, the 2SC3360-T1B-A is designed for high-voltage applications, with a collector-emitter voltage of 200V.
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