TOSHIBA 2SC2229-O(MIT1F,M)

Manufacturer No:

2SC2229-O(MIT1F,M)

Manufacturer:

TOSHIBA

Package:

TO-226-3, TO-92-3 Long Body

Description:

NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole

Quantity:

In Stock :2935

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Date Code：Within 2 Years

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

2SC2229-O(MIT1F,M) Information

TOSHIBA 2SC2229-O(MIT1F,M) technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA 2SC2229-O(MIT1F,M).

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 Long Body

Supplier Device Package
TO-92MOD

Operating Temperature
150°C TJ

Packaging
Bulk

Published
2009

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Power - Max
800mW

Transistor Type
NPN

Type
Parameter

DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA 5V

Current - Collector Cutoff (Max)
100nA ICBO

Vce Saturation (Max) @ Ib, Ic
500mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max)
150V

Current - Collector (Ic) (Max)
50mA

Frequency - Transition
120MHz

Download datasheets and manufacturer documentation for TOSHIBA 2SC2229-O(MIT1F,M).

Datasheets:

toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf

2SC2229-O(MIT1F,M) Overview

The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 70 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1mA, 10mA.The product comes in the supplier device package of TO-92MOD.A 150V maximal voltage - Collector Emitter Breakdown is present in the device.