ROHM 2SC2058STPP
Manufacturer No:
2SC2058STPP
Manufacturer:
Package:
SC-72 Formed Leads
Description:
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-72 Formed Leads Tape & Reel (TR) Through Hole
Quantity:
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2SC2058STPP Information
ROHM 2SC2058STPP technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SC2058STPP.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- SC-72 Formed Leads
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2007
- JESD-609 Code
- e1
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- TIN SILVER COPPER
- HTS Code
- 8541.21.00.75
- Subcategory
- Other Transistors
- Max Power Dissipation
- 300mW
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 10
- Pin Count
- 3
Download datasheets and manufacturer documentation for ROHM 2SC2058STPP.
2SC2058STPP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 82 @ 1mA 6V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 300MHz.During maximum operation, collector current can be as low as 50mA volts.
2SC2058STPP Features
the DC current gain for this device is 82 @ 1mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz
2SC2058STPP Applications
There are a lot of ROHM Semiconductor
2SC2058STPP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
2SC2058STPP Relevant information
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