MCC 2SC1959-GR-AP

Manufacturer No:

2SC1959-GR-AP

Manufacturer:

MCC

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Description:

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

Quantity:

In Stock :4101

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Shipped from：HK Warehouse

Expected Shipping：Thu, Jun 4 - Fri, Jun 5, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

2SC1959-GR-AP Information

MCC 2SC1959-GR-AP technical specifications, attributes, parameters and parts with similar specifications to MCC 2SC1959-GR-AP.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Surface Mount
NO

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Box (TB)

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Type
Parameter

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn)

Terminal Position
BOTTOM

Terminal Form
WIRE

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Reach Compliance Code
compliant

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Pin Count
3

JESD-30 Code
O-PBCY-W3

Download datasheets and manufacturer documentation for MCC 2SC1959-GR-AP.

Datasheets:

microcommercialco-2sc1959oap-datasheets-7498.pdf

2SC1959-GR-AP Overview

In this device, the DC current gain is 200 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.There is a 30V maximal voltage in the device due to collector-emitter breakdown.