Renesas 2SC1213C-E
Manufacturer No:
2SC1213C-E
Manufacturer:
Renesas
Package:
TO-226-3, TO-92-3 (TO-226AA)
Description:
NPN 150°C (TJ) 500nA (ICBO) TO-226-3, TO-92-3 (TO-226AA) Through Hole
Quantity:
In Stock :7402
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2SC1213C-E Information
Renesas 2SC1213C-E technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SC1213C-E.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package
- TO-92
- Mfr
- Renesas Electronics America Inc
- Package
- Bulk
- Product Status
- Active
- Operating Temperature
- 150°C (TJ)
- Power - Max
- 400 mW
- Transistor Type
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 10mA, 3V
- Type
- Parameter
- Current - Collector Cutoff (Max)
- 500nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic
- 600mV @ 15mA, 150mA
- Voltage - Collector Emitter Breakdown (Max)
- 35 V
- Current - Collector (Ic) (Max)
- 500 mA
Download datasheets and manufacturer documentation for Renesas 2SC1213C-E.
2SC1213C-E Overview
DC current gain in this device equals 100 @ 10mA, 3V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 15mA, 150mA.Product comes in TO-92 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2SC1213C-E Features
the DC current gain for this device is 100 @ 10mA, 3V
the vce saturation(Max) is 600mV @ 15mA, 150mA
the supplier device package of TO-92
2SC1213C-E Applications
There are a lot of Renesas Electronics America Inc
2SC1213C-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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