Renesas 2SC1213AB-E

Manufacturer No:

2SC1213AB-E

Manufacturer:

Renesas

Package:

TO-226-3, TO-92-3 (TO-226AA)

Description:

NPN 150°C (TJ) 500nA (ICBO) TO-226-3, TO-92-3 (TO-226AA) Through Hole

Quantity:

Delivery:

Payment:

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2SC1213AB-E information

Renesas 2SC1213AB-E technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SC1213AB-E.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package
TO-92

Mfr
Renesas Electronics America Inc

Package
Bulk

Product Status
Active

Operating Temperature
150°C (TJ)

Power - Max
400 mW

Transistor Type
NPN

DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA, 3V

Current - Collector Cutoff (Max)
500nA (ICBO)

Vce Saturation (Max) @ Ib, Ic
600mV @ 15mA, 150mA

Voltage - Collector Emitter Breakdown (Max)
50 V

Current - Collector (Ic) (Max)
500 mA

Download datasheets and manufacturer documentation for Renesas 2SC1213AB-E.

2SC1213AB-E Overview

DC current gain in this device equals 60 @ 10mA, 3V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 15mA, 150mA.Product comes in TO-92 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2SC1213AB-E Features

the DC current gain for this device is 60 @ 10mA, 3V
the vce saturation(Max) is 600mV @ 15mA, 150mA
the supplier device package of TO-92

2SC1213AB-E Applications

There are a lot of Renesas Electronics America Inc
2SC1213AB-E applications of single BJT transistors.

Inverter
Interface
Driver
Muting

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