Renesas 2SC1213AB-E

Manufacturer No:

2SC1213AB-E

Manufacturer:

Renesas

Package:

TO-226-3, TO-92-3 (TO-226AA)

Description:

NPN 150°C (TJ) 500nA (ICBO) TO-226-3, TO-92-3 (TO-226AA) Through Hole

Quantity:

In Stock :6075

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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SHIPPING COST

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

2SC1213AB-E Information

Renesas 2SC1213AB-E technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SC1213AB-E.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package
TO-92

Mfr
Renesas Electronics America Inc

Package
Bulk

Product Status
Active

Operating Temperature
150°C (TJ)

Power - Max
400 mW

Transistor Type
NPN

DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA, 3V

Type
Parameter

Current - Collector Cutoff (Max)
500nA (ICBO)

Vce Saturation (Max) @ Ib, Ic
600mV @ 15mA, 150mA

Voltage - Collector Emitter Breakdown (Max)
50 V

Current - Collector (Ic) (Max)
500 mA

Download datasheets and manufacturer documentation for Renesas 2SC1213AB-E.

2SC1213AB-E Overview

DC current gain in this device equals 60 @ 10mA, 3V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 15mA, 150mA.Product comes in TO-92 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.