ROHM 2SB1732TL
Manufacturer No:
2SB1732TL
Manufacturer:
ROHM
Package:
3-SMD, Flat Lead
Description:
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
Quantity:
In Stock :6515
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
2SB1732TL Information
ROHM 2SB1732TL technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SB1732TL.
- Type
- Parameter
- Factory Lead Time
- 13 Weeks
- Contact Plating
- Copper, Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 3-SMD, Flat Lead
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2007
- Type
- Parameter
- JESD-609 Code
- e2
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Copper (Sn/Cu)
- Subcategory
- Other Transistors
- Max Power Dissipation
- 400mW
- Terminal Position
- DUAL
Download datasheets and manufacturer documentation for ROHM 2SB1732TL.
2SB1732TL Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 200mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -85mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 25mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at -1.5A in order to achieve high efficiency.The emitter base voltage can be kept at -6V for high efficiency.The part has a transition frequency of 400MHz.The breakdown input voltage is 12V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
2SB1732TL Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -85mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 400MHz
2SB1732TL Applications
There are a lot of ROHM Semiconductor
2SB1732TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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