ROHM 2SB1565FU6E
Manufacturer No:
2SB1565FU6E
Manufacturer:
ROHM
Package:
TO-220-3 Full Pack
Description:
PNP 150°C TJ 10?A ICBO TO-220-3 Full Pack Bulk Through Hole
Quantity:
In Stock :9747
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
2SB1565FU6E Information
ROHM 2SB1565FU6E technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SB1565FU6E.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Supplier Device Package
- TO-220FN
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Published
- 2005
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Type
- Parameter
- Min Operating Temperature
- -55°C
- Max Power Dissipation
- 2W
- Polarity
- PNP
- Element Configuration
- Single
- Power - Max
- 2W
- Gain Bandwidth Product
- 15MHz
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 1.5V
- Max Collector Current
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 500mA 5V
Download datasheets and manufacturer documentation for ROHM 2SB1565FU6E.
2SB1565FU6E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 200mA, 2A.Continuous collector voltages of -3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.TO-220FN is the supplier device package for this product.This device displays a 60V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 3A volts.
2SB1565FU6E Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 200mA, 2A
the emitter base voltage is kept at -7V
the supplier device package of TO-220FN
2SB1565FU6E Applications
There are a lot of ROHM Semiconductor
2SB1565FU6E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
Listed Part Number
3,000+
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In-stock SKU
15,000+
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