ROHM 2SB1561T100Q
Manufacturer No:
2SB1561T100Q
Manufacturer:
ROHM
Package:
TO-243AA
Description:
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
Quantity:
In Stock :3264
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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2SB1561T100Q Information
ROHM 2SB1561T100Q technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SB1561T100Q.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Contact Plating
- Copper, Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-243AA
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 1998
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Termination
- SMD/SMT
- ECCN Code
- EAR99
- HTS Code
- 8541.21.00.75
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -60V
- Max Power Dissipation
- 500mW
Download datasheets and manufacturer documentation for ROHM 2SB1561T100Q.
PCN Design/Specification:
2SB1561T100Q Overview
In this device, the DC current gain is 120 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 50mA, 1A.A -2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SB1561T100Q Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -2A
a transition frequency of 200MHz
2SB1561T100Q Applications
There are a lot of ROHM Semiconductor
2SB1561T100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
Listed Part Number
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