ROHM 2SB1412TLR
Manufacturer No:
2SB1412TLR
Manufacturer:
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
PNP 150°C TJ 500nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
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2SB1412TLR information
ROHM 2SB1412TLR technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SB1412TLR.
- Type
- Parameter
- Contact Plating
- Copper, Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2004
- JESD-609 Code
- e2
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Copper (Sn98Cu2)
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -20V
- Max Power Dissipation
- 1W
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- -5A
- Frequency
- 120MHz
- Time@Peak Reflow Temperature-Max (s)
- 10
- Pin Count
- 3
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 1W
- Gain Bandwidth Product
- 120MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 20V
- Max Collector Current
- 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 180 @ 500mA 2V
- Current - Collector Cutoff (Max)
- 500nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 100mA, 4A
- Collector Emitter Breakdown Voltage
- 20V
- Transition Frequency
- 120MHz
- Collector Emitter Saturation Voltage
- 350mV
- Max Breakdown Voltage
- 20V
- Collector Base Voltage (VCBO)
- 30V
- Emitter Base Voltage (VEBO)
- -6V
- hFE Min
- 82
- Continuous Collector Current
- -5A
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for ROHM 2SB1412TLR.
Datasheets:
2SB1412TLR Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 350mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -5A.Keeping the emitter base voltage at -6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 120MHz in the part.Single BJT transistor can be broken down at a voltage of 20V volts.When collector current reaches its maximum, it can reach 5A volts.
2SB1412TLR Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at -6V
the current rating of this device is -5A
a transition frequency of 120MHz
2SB1412TLR Applications
There are a lot of ROHM Semiconductor
2SB1412TLR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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