ROHM 2SB1308T100R
Manufacturer No:
2SB1308T100R
Manufacturer:
ROHM
Package:
TO-243AA
Description:
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
Quantity:
In Stock :6203
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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2SB1308T100R Information
ROHM 2SB1308T100R technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SB1308T100R.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Contact Plating
- Copper, Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-243AA
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 1998
- Type
- Parameter
- JESD-609 Code
- e2
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- TIN COPPER
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -20V
- Max Power Dissipation
- 2W
- Terminal Form
- FLAT
Download datasheets and manufacturer documentation for ROHM 2SB1308T100R.
Datasheets:
PCN Design/Specification:
2SB1308T100R Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -450mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 450mV @ 150mA, 1.5A.Continuous collector voltages of -3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 3A volts.
2SB1308T100R Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of -450mV
the vce saturation(Max) is 450mV @ 150mA, 1.5A
the emitter base voltage is kept at -6V
the current rating of this device is -3A
2SB1308T100R Applications
There are a lot of ROHM Semiconductor
2SB1308T100R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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