

ROHM 2SB1197KT146R
Manufacturer No:
2SB1197KT146R
Manufacturer:
Package:
SC-59, 3 PIN
Description:
Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, 3 PIN
Quantity:


In Stock :6053
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2SB1197KT146R Information
ROHM 2SB1197KT146R technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SB1197KT146R.
- Type
- Parameter
- Pbfree Code
- Yes
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Active
- Ihs Manufacturer
- ROHM CO LTD
- Part Package Code
- SC-59
- Package Description
- SC-59, 3 PIN
- Pin Count
- 3
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- Samacsys Manufacturer
- ROHM Semiconductor
- Type
- Parameter
- Collector Current-Max (IC)
- 0.8 A
- Collector-Emitter Voltage-Max
- 32 V
- Configuration
- SINGLE
- DC Current Gain-Min (hFE)
- 180
- JESD-30 Code
- R-PDSO-G3
- JESD-609 Code
- e1
- Moisture Sensitivity Level
- 1
- Number of Elements
- 1
- Number of Terminals
- 3
- Operating Temperature-Max
- 150 °C
Download datasheets and manufacturer documentation for ROHM 2SB1197KT146R.
Datasheets:
Product Description
The 2SB1197KT146R is a surface-mount PNP bipolar junction transistor (BJT) from ROHM Semiconductor, designed for various amplifier applications. This discrete semiconductor product features a collector-base voltage of -40V, a collector-emitter breakdown voltage of 32V, and a collector-emitter saturation voltage of -500mV. With a maximum collector current of 800mA and a DC current gain of 180, this transistor is suitable for high-frequency applications.
Features
- High collector-base voltage of -40V
- Low collector-emitter saturation voltage of -500mV
- High DC current gain of 180
- Maximum collector current of 800mA
- Gain bandwidth product of 200MHz
- Radiation-hardening not required
- Lead-free and RoHS3 compliant
Applications
- Amplifiers
- Switching circuits
- Power supplies
- Signal processing
Alternative Parts
- 2SB1197KT146R is a suitable alternative to other PNP BJTs with similar specifications, such as the 2SB1197KT146R from other manufacturers.
Embedded Modules
- This transistor is commonly used in various embedded modules, including:
- Amplifier modules
- Power supply modules
- Signal processing modules
Frequently Asked Questions
Q: What is the maximum operating temperature of the 2SB1197KT146R? A: The maximum operating temperature is 150°C.
Q: What is the minimum operating temperature of the 2SB1197KT146R? A: The minimum operating temperature is -55°C.
Q: What is the maximum power dissipation of the 2SB1197KT146R? A: The maximum power dissipation is 200mW.
Q: Is the 2SB1197KT146R radiation-hardened? A: No, the 2SB1197KT146R is not radiation-hardened.
Q: What is the packaging type of the 2SB1197KT146R? A: The packaging type is Tape & Reel (TR).
2SB1197KT146R Relevant information
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