ROHM 2SB1189T100R
Manufacturer No:
2SB1189T100R
Manufacturer:
ROHM
Package:
TO-243AA
Description:
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
Quantity:
In Stock :9152
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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2SB1189T100R Information
ROHM 2SB1189T100R technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SB1189T100R.
- Type
- Parameter
- Contact Plating
- Copper, Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-243AA
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 1998
- JESD-609 Code
- e2
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- TIN COPPER
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -80V
- Max Power Dissipation
- 2W
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- 260
Download datasheets and manufacturer documentation for ROHM 2SB1189T100R.
Datasheets:
PCN Design/Specification:
2SB1189T100R Overview
DC current gain in this device equals 180 @ 100mA 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -700mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -700mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 700mA volts.
2SB1189T100R Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -700mA
a transition frequency of 100MHz
2SB1189T100R Applications
There are a lot of ROHM Semiconductor
2SB1189T100R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
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