ROHM 2SB1182TLQ
Manufacturer No:
2SB1182TLQ
Manufacturer:
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
PNP 150°C TJ 1?A ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
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2SB1182TLQ information
ROHM 2SB1182TLQ technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SB1182TLQ.
- Type
- Parameter
- Contact Plating
- Copper, Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 1998
- JESD-609 Code
- e2
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Termination
- SMD/SMT
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Copper (Sn98Cu2)
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -32V
- Max Power Dissipation
- 10W
- Terminal Form
- GULL WING
- Current Rating
- -2A
- Base Part Number
- 2SB1182
- Pin Count
- 3
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 1W
- Power - Max
- 10W
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 100MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 800mV
- Max Collector Current
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 500mA 3V
- Current - Collector Cutoff (Max)
- 1?A ICBO
- Vce Saturation (Max) @ Ib, Ic
- 800mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage
- 32V
- Transition Frequency
- 100MHz
- Max Breakdown Voltage
- 32V
- Collector Base Voltage (VCBO)
- -40V
- Emitter Base Voltage (VEBO)
- -5V
- hFE Min
- 82
- Continuous Collector Current
- -2A
- REACH SVHC
- No SVHC
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for ROHM 2SB1182TLQ.
2SB1182TLQ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 800mV @ 200mA, 2A.Single BJT transistor is recommended to keep the continuous collector voltage at -2A in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 32V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
2SB1182TLQ Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz
2SB1182TLQ Applications
There are a lot of ROHM Semiconductor
2SB1182TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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