ROHM 2SB1182TLQ
Manufacturer No:
2SB1182TLQ
Manufacturer:
ROHM
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
PNP 150°C TJ 1?A ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
Quantity:
In Stock :4224
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2SB1182TLQ Information
ROHM 2SB1182TLQ technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SB1182TLQ.
- Type
- Parameter
- Contact Plating
- Copper, Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 1998
- JESD-609 Code
- e2
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Termination
- SMD/SMT
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Copper (Sn98Cu2)
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -32V
- Max Power Dissipation
- 10W
Download datasheets and manufacturer documentation for ROHM 2SB1182TLQ.
2SB1182TLQ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 800mV @ 200mA, 2A.Single BJT transistor is recommended to keep the continuous collector voltage at -2A in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 32V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
2SB1182TLQ Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz
2SB1182TLQ Applications
There are a lot of ROHM Semiconductor
2SB1182TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
Listed Part Number
3,000+
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