

ONSEMI 2SB1143T
Manufacturer No:
2SB1143T
Manufacturer:
Package:
TO-225AA, TO-126-3
Description:
PNP 150°C TJ 1?A ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
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2SB1143T information
ONSEMI 2SB1143T technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2SB1143T.
- Type
- Parameter
- Contact Plating
- Tin
- Mounting Type
- Through Hole
- Package / Case
- TO-225AA, TO-126-3
- Surface Mount
- NO
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Published
- 2003
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Max Power Dissipation
- 1.5W
- Pin Count
- 3
- Number of Elements
- 1
- Element Configuration
- Single
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 150MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 50V
- Max Collector Current
- 4A
- Current - Collector Cutoff (Max)
- 1?A ICBO
- Vce Saturation (Max) @ Ib, Ic
- 700mV @ 100mA, 2A
- Collector Emitter Breakdown Voltage
- 50V
- Max Frequency
- 150MHz
- Transition Frequency
- 150MHz
- Collector Emitter Saturation Voltage
- -700mV
- Max Breakdown Voltage
- 50V
- Collector Base Voltage (VCBO)
- 60V
- Emitter Base Voltage (VEBO)
- 6V
- hFE Min
- 100
- Continuous Collector Current
- 4A
- Height
- 11mm
- Length
- 8mm
- Width
- 3.3mm
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for ONSEMI 2SB1143T.
Datasheets:
2SB1143T Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -700mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 4A is necessary for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 50V volts.The maximum collector current is 4A volts.
2SB1143T Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SB1143T Applications
There are a lot of ON Semiconductor
2SB1143T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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