ROHM 2SB1132T100R
Manufacturer No:
2SB1132T100R
Manufacturer:
ROHM
Package:
TO-243AA
Description:
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
Quantity:
In Stock :7574
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2SB1132T100R Information
ROHM 2SB1132T100R technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SB1132T100R.
- Type
- Parameter
- Factory Lead Time
- 7 Weeks
- Contact Plating
- Copper, Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-243AA
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 1997
- Type
- Parameter
- JESD-609 Code
- e2
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- TIN COPPER
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -32V
- Max Power Dissipation
- 2W
Download datasheets and manufacturer documentation for ROHM 2SB1132T100R.
Datasheets:
PCN Design/Specification:
2SB1132T100R Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 100mA 3V DC current gain.As it features a collector emitter saturation voltage of -200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -1A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 32V volts.When collector current reaches its maximum, it can reach 1A volts.
2SB1132T100R Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
2SB1132T100R Applications
There are a lot of ROHM Semiconductor
2SB1132T100R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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