ROHM 2SB1132T100P
Manufacturer No:
2SB1132T100P
Manufacturer:
ROHM
Package:
TO-243AA
Description:
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
Quantity:
In Stock :2530
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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2SB1132T100P Information
ROHM 2SB1132T100P technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SB1132T100P.
- Type
- Parameter
- Contact Plating
- Copper, Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-243AA
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2004
- JESD-609 Code
- e2
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Copper (Sn/Cu)
- HTS Code
- 8541.21.00.75
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -32V
- Max Power Dissipation
- 2W
Download datasheets and manufacturer documentation for ROHM 2SB1132T100P.
Datasheets:
PCN Design/Specification:
2SB1132T100P Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 82 @ 100mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SB1132T100P Features
the DC current gain for this device is 82 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
2SB1132T100P Applications
There are a lot of ROHM Semiconductor
2SB1132T100P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
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