ROHM 2SAR522MT2L
Manufacturer No:
2SAR522MT2L
Manufacturer:
ROHM
Package:
SOT-723
Description:
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-723 Cut Tape (CT) Surface Mount
Quantity:
In Stock :3885
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
2SAR522MT2L Information
ROHM 2SAR522MT2L technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SAR522MT2L.
- Type
- Parameter
- Factory Lead Time
- 13 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-723
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2010
- JESD-609 Code
- e2
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Subcategory
- Other Transistors
- Max Power Dissipation
- 150mW
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- 260
Download datasheets and manufacturer documentation for ROHM 2SAR522MT2L.
Datasheets:
2SAR522MT2L Overview
In this device, the DC current gain is 120 @ 1mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -120mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 350MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
2SAR522MT2L Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 350MHz
2SAR522MT2L Applications
There are a lot of ROHM Semiconductor
2SAR522MT2L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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