Rochester 2SA2180

Manufacturer No:

2SA2180

Manufacturer:

Rochester

Package:

TO-220-3 Full Pack

Description:

PNP 10?A ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Bulk Through Hole

Quantity:

In Stock :2697

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

2SA2180 Information

Rochester 2SA2180 technical specifications, attributes, parameters and parts with similar specifications to Rochester 2SA2180.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3 Full Pack

Surface Mount
NO

Transistor Element Material
SILICON

Packaging
Bulk

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Terminal Position
SINGLE

Pin Count
3

Type
Parameter

JESD-30 Code
R-PSFM-T3

Qualification Status
COMMERCIAL

Number of Elements
1

Configuration
SINGLE

Power - Max
2W

Transistor Application
SWITCHING

Polarity/Channel Type
PNP

Transistor Type
PNP

DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 125mA 2V

Current - Collector Cutoff (Max)
10?A ICBO

Download datasheets and manufacturer documentation for Rochester 2SA2180.

Datasheets:

rochesterelectronicsllc-2sa2180-datasheets-7726.pdf

2SA2180 Overview

In this device, the DC current gain is 200 @ 125mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 125mA, 2.5A.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.There is a 50V maximal voltage in the device due to collector-emitter breakdown.