ROHM 2SA2007E

Manufacturer No:

2SA2007E

Manufacturer:

ROHM

Package:

TO-220-3 Full Pack

Description:

PNP 150°C TJ 10?A ICBO TO-220-3 Full Pack Bulk Through Hole

Quantity:

Delivery:

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In Stock :Available

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2SA2007E information

ROHM 2SA2007E technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SA2007E.

Type
Parameter

Factory Lead Time
7 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3 Full Pack

Number of Pins
3

Operating Temperature
150°C TJ

Packaging
Bulk

Published
1999

Part Status
Not For New Designs

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Max Power Dissipation
25W

Element Configuration
Single

Gain Bandwidth Product
80MHz

Transistor Type
PNP

Collector Emitter Voltage (VCEO)
500mV

Max Collector Current
12A

DC Current Gain (hFE) (Min) @ Ic, Vce
320 @ 2A 2V

Current - Collector Cutoff (Max)
10?A ICBO

Vce Saturation (Max) @ Ib, Ic
500mV @ 400mA, 8A

Collector Emitter Breakdown Voltage
60V

Current - Collector (Ic) (Max)
12A

Collector Emitter Saturation Voltage
-300mV

Collector Base Voltage (VCBO)
-100V

Emitter Base Voltage (VEBO)
-5V

Continuous Collector Current
-12A

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for ROHM 2SA2007E.

Datasheets:

rohmsemiconductor-2sa2007e-datasheets-4689.pdf

2SA2007E Overview

In this device, the DC current gain is 320 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 400mA, 8A.Maintaining the continuous collector voltage at -12A is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Maximum collector currents can be below 12A volts.

2SA2007E Features

the DC current gain for this device is 320 @ 2A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 400mA, 8A
the emitter base voltage is kept at -5V

2SA2007E Applications

There are a lot of ROHM Semiconductor
2SA2007E applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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