TOSHIBA 2SA1931,NETQ(J

Manufacturer No:

2SA1931,NETQ(J

Manufacturer:

TOSHIBA

Package:

TO-220-3 Full Pack

Description:

PNP 150°C TJ 1?A ICBO TO-220-3 Full Pack Bulk Through Hole

Quantity:

In Stock :4337

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

2SA1931,NETQ(J Information

TOSHIBA 2SA1931,NETQ(J technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA 2SA1931,NETQ(J.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3 Full Pack

Supplier Device Package
TO-220NIS

Operating Temperature
150°C TJ

Packaging
Bulk

Published
2007

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Power - Max
2W

Transistor Type
PNP

Type
Parameter

DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 1V

Current - Collector Cutoff (Max)
1?A ICBO

Vce Saturation (Max) @ Ib, Ic
400mV @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max)
50V

Current - Collector (Ic) (Max)
5A

Frequency - Transition
60MHz

Download datasheets and manufacturer documentation for TOSHIBA 2SA1931,NETQ(J.

Datasheets:

toshibasemiconductorandstorage-2sa1931sinfqj-datasheets-1023.pdf

2SA1931,NETQ(J Overview

This device has a DC current gain of 100 @ 1A 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-220NIS.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.