ONSEMI 2SA1709T-AN

Manufacturer No:

2SA1709T-AN

Manufacturer:

ONSEMI

Package:

SC-71

Description:

PNP 150°C TJ 100nA ICBO SC-71 Tape & Reel (TR) Through Hole

Quantity:

Delivery:

Payment:

In Stock :Available

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2SA1709T-AN information

ONSEMI 2SA1709T-AN technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2SA1709T-AN.

Type
Parameter

Mounting Type
Through Hole

Package / Case
SC-71

Number of Pins
3

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Published
2012

JESD-609 Code
e2

Pbfree Code
yes

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

ECCN Code
EAR99

Terminal Finish
Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

Max Power Dissipation
1W

Pin Count
3

Power - Max
1W

Transistor Type
PNP

Collector Emitter Voltage (VCEO)
100V

Max Collector Current
2A

DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 10V

Current - Collector Cutoff (Max)
100nA ICBO

Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A

Collector Emitter Breakdown Voltage
100V

Frequency - Transition
120MHz

Collector Base Voltage (VCBO)
120V

hFE Min
100

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for ONSEMI 2SA1709T-AN.

Datasheets:

onsemiconductor-2sa1709tan-datasheets-2360.pdf

2SA1709T-AN Overview

DC current gain in this device equals 200 @ 100mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 100mA, 1A.An emitter's base voltage can be kept at 6V to gain high efficiency.In extreme cases, the collector current can be as low as 2A volts.

2SA1709T-AN Features

the DC current gain for this device is 200 @ 100mA 10V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 6V

2SA1709T-AN Applications

There are a lot of ON Semiconductor
2SA1709T-AN applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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