Renesas 2SA1052MDTR-E
Manufacturer No:
2SA1052MDTR-E
Manufacturer:
Renesas
Package:
TO-236-3, SC-59, SOT-23-3
Description:
PNP 150°C (TJ) 500nA (ICBO) TO-236-3, SC-59, SOT-23-3 Surface Mount
Quantity:
In Stock :7524
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Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2SA1052MDTR-E Information
Renesas 2SA1052MDTR-E technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SA1052MDTR-E.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- 3-MPAK
- Mfr
- Renesas Electronics America Inc
- Package
- Bulk
- Product Status
- Active
- Operating Temperature
- 150°C (TJ)
- Power - Max
- 150 mW
- Transistor Type
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 250 @ 2mA, 12V
- Type
- Parameter
- Current - Collector Cutoff (Max)
- 500nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic
- 200mV @ 1mA, 10mA
- Voltage - Collector Emitter Breakdown (Max)
- 30 V
- Current - Collector (Ic) (Max)
- 100 mA
Download datasheets and manufacturer documentation for Renesas 2SA1052MDTR-E.
2SA1052MDTR-E Overview
This device has a DC current gain of 250 @ 2mA, 12V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of 3-MPAK.Detection of Collector Emitter Breakdown at 30 V maximal voltage is present.
2SA1052MDTR-E Features
the DC current gain for this device is 250 @ 2mA, 12V
the vce saturation(Max) is 200mV @ 1mA, 10mA
the supplier device package of 3-MPAK
2SA1052MDTR-E Applications
There are a lot of Renesas Electronics America Inc
2SA1052MDTR-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
