INFINEON 2N7002DWH6327XT

Manufacturer No:

2N7002DWH6327XT

Manufacturer:

INFINEON

Package:

SOT-363-6

Description:

Si Cut Tape 60 V SOT-363-6

Quantity:

In Stock :9182

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Shipping & Availability

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Shipped from：HK Warehouse

Expected Shipping：Tue, May 19 - Wed, May 20, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

2N7002DWH6327XT Information

INFINEON 2N7002DWH6327XT technical specifications, attributes, parameters and parts with similar specifications to INFINEON 2N7002DWH6327XT.

Type
Parameter

Package / Case
SOT-363-6

Mount
Surface Mount

Number of Pins
6

Mounting Style
SMD/SMT

Factory Pack Quantity:Factory Pack Quantity
5000

Manufacturer
Micro Commercial Components (MCC)

Brand
Micro Commercial Components (MCC)

RoHS Status

Vds - Drain-Source Breakdown Voltage
60 V

Typical Turn-On Delay Time
3 ns, 3 ns

Type
Parameter

Vgs th - Gate-Source Threshold Voltage
1.5 V

Qualification
AEC-Q101

Pd - Power Dissipation
500 mW

Transistor Polarity
N-Channel

Maximum Operating Temperature
+ 150 C

Vgs - Gate-Source Voltage
- 20 V, + 20 V

Unit Weight
0.000265 oz

Minimum Operating Temperature
- 55 C

Forward Transconductance - Min
200 mS, 200 mS

Channel Mode
Enhancement

Download datasheets and manufacturer documentation for INFINEON 2N7002DWH6327XT.

2N7002DWH6327XT Overview

Its continuous drain current is 300 mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60 V, and this device has a drain-to-source breakdown voltage of 60 V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 5.5 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.6 Ω when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20 V.To operate this transistor, you need to apply a 60 V drain to source voltage (Vdss).

2N7002DWH6327XT Features

a continuous drain current (ID) of 300 mA
a drain-to-source breakdown voltage of 60 V voltage
the turn-off delay time is 5.5 ns
single MOSFETs transistor is 1.6 Ω
a 60 V drain to source voltage (Vdss)