Microchip 2N7000-G
Manufacturer No:
2N7000-G
Manufacturer:
Microchip
Package:
TO-226-3, TO-92-3 (TO-226AA)
Description:
MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V, 5 Ohm
Quantity:
In Stock :9367
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
2N7000-G Information
Microchip 2N7000-G technical specifications, attributes, parameters and parts with similar specifications to Microchip 2N7000-G.
- Type
- Parameter
- BVdss min (V)
- 60
- Rds (on) max (Ohms)
- 5.0
- CISSmax (pF)
- 60
- Vgs(th) max (V)
- 3.0
- Package
- TO-92
- Type
- Parameter
Download datasheets and manufacturer documentation for Microchip 2N7000-G.
Application Notes:
Data Sheets:
2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Low CISS and fast switching speeds
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and high gain
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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