Microchip 2N6788
Manufacturer No:
2N6788
Manufacturer:
Microchip
Package:
HERMETIC SEALED, FORMERLY TO-39, 3 PIN
Description:
Description: Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, FORMERLY TO-39, 3 PIN
Quantity:
In Stock :6902
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Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2N6788 Information
Microchip 2N6788 technical specifications, attributes, parameters and parts with similar specifications to Microchip 2N6788.
- Type
- Parameter
- RoHS Status
- Non-RoHS Compliant
- Part Life Cycle Code
- Obsolete
- Ihs Manufacturer
- MICROSEMI CORP
- Package Description
- HERMETIC SEALED, FORMERLY TO-39, 3 PIN
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- Case Connection
- DRAIN
- Configuration
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min
- 100 V
- Drain Current-Max (ID)
- 6 A
- Type
- Parameter
- Drain-source On Resistance-Max
- 0.35 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code
- TO-205AF
- JESD-30 Code
- O-MBCY-W3
- JESD-609 Code
- e0
- Number of Elements
- 1
- Number of Terminals
- 3
- Operating Mode
- ENHANCEMENT MODE
- Operating Temperature-Max
- 150 °C
- Package Body Material
- METAL
Download datasheets and manufacturer documentation for Microchip 2N6788.
Datasheets:
2N6788 Overview
The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 40 ns.Peak drain current is 24A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 40 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
2N6788 Features
a continuous drain current (ID) of 6A
the turn-off delay time is 40 ns
based on its rated peak drain current 24A.
a 100V drain to source voltage (Vdss)
2N6788 Applications
There are a lot of Microsemi Corporation
2N6788 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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