Microchip 2N6768T1

Manufacturer No:

2N6768T1

Manufacturer:

Microchip

Package:

TO-254-3, TO-254AA (Straight Leads)

Description:

MOSFET (Metal Oxide) N-Channel Bulk 400m ? @ 14A, 10V ±20V 110nC @ 10V 400V TO-254-3, TO-254AA (Straight Leads)

Quantity:

In Stock :4071

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step2：Desiccant Protection

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

2N6768T1 Information

Microchip 2N6768T1 technical specifications, attributes, parameters and parts with similar specifications to Microchip 2N6768T1.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-254-3, TO-254AA (Straight Leads)

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Bulk

Published
1997

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Type
Parameter

ECCN Code
EAR99

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
PIN/PEG

Pin Count
3

JESD-30 Code
S-XSFM-P3

Qualification Status
Not Qualified

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Download datasheets and manufacturer documentation for Microchip 2N6768T1.

2N6768T1 Overview

This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.A normal operation of the DS requires keeping the breakdown voltage above 400V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).