NTE Electronics, Inc 2N6728

Manufacturer No:

2N6728

Manufacturer:

NTE Electronics, Inc

Package:

TO-237AA

Description:

PNP -65°C ~ 150°C (TJ) 100nA (ICBO) TO-237AA Through Hole

Quantity:

Delivery:

Payment:

In Stock :Available

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2N6728 information

NTE Electronics, Inc 2N6728 technical specifications, attributes, parameters and parts with similar specifications to NTE Electronics, Inc 2N6728.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-237AA

Supplier Device Package
TO-237

Mfr
NTE Electronics, Inc

Package
Bag

Product Status
Active

Operating Temperature
-65°C ~ 150°C (TJ)

Power - Max
1 W

Transistor Type
PNP

DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 50mA, 1V

Current - Collector Cutoff (Max)
100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 250mA

Voltage - Collector Emitter Breakdown (Max)
60 V

Current - Collector (Ic) (Max)
2 A

Frequency - Transition
500MHz

Download datasheets and manufacturer documentation for NTE Electronics, Inc 2N6728.

2N6728 Overview

DC current gain in this device equals 80 @ 50mA, 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 250mA.Product comes in TO-237 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2N6728 Features

the DC current gain for this device is 80 @ 50mA, 1V
the vce saturation(Max) is 500mV @ 10mA, 250mA
the supplier device package of TO-237

2N6728 Applications

There are a lot of NTE Electronics, Inc
2N6728 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

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