Harris 2N6530
Manufacturer No:
2N6530
Manufacturer:
Harris
Package:
TO-220-3
Description:
NPN - Darlington -65°C ~ 150°C (TJ) 1mA TO-220-3 Through Hole
Quantity:
In Stock :1031
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Expected Shipping：Mon, Jun 8 - Tue, Jun 9, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2N6530 Information
Harris 2N6530 technical specifications, attributes, parameters and parts with similar specifications to Harris 2N6530.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220-3
- Mfr
- Harris Corporation
- Package
- Bulk
- Product Status
- Active
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Power - Max
- 65 W
- Transistor Type
- NPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 1000 @ 5A, 3V
- Type
- Parameter
- Current - Collector Cutoff (Max)
- 1mA
- Vce Saturation (Max) @ Ib, Ic
- 3V @ 80mA, 8A
- Voltage - Collector Emitter Breakdown (Max)
- 80 V
- Current - Collector (Ic) (Max)
- 8 A
Download datasheets and manufacturer documentation for Harris 2N6530.
2N6530 Overview
In this device, the DC current gain is 1000 @ 5A, 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 80mA, 8A.Product comes in the supplier's device package TO-220-3.There is a 80 V maximal voltage in the device due to collector-emitter breakdown.
2N6530 Features
the DC current gain for this device is 1000 @ 5A, 3V
the vce saturation(Max) is 3V @ 80mA, 8A
the supplier device package of TO-220-3
2N6530 Applications
There are a lot of Harris Corporation
2N6530 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
Listed Part Number
3,000+
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