

Motorola 2N6520RL1
Manufacturer No:
2N6520RL1
Manufacturer:
Package:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Description:
PNP -55°C ~ 150°C (TJ) 50nA (ICBO) TO-226-3, TO-92-3 (TO-226AA) Formed Leads Through Hole
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2N6520RL1 information
Motorola 2N6520RL1 technical specifications, attributes, parameters and parts with similar specifications to Motorola 2N6520RL1.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package
- TO-92 (TO-226)
- Mfr
- Motorola
- Package
- Bulk
- Product Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Power - Max
- 1.5 W
- Transistor Type
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 30 @ 30mA, 10V
- Current - Collector Cutoff (Max)
- 50nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)
- 350 V
- Current - Collector (Ic) (Max)
- 500 mA
- Frequency - Transition
- 200MHz
Download datasheets and manufacturer documentation for Motorola 2N6520RL1.
2N6520RL1 Overview
In this device, the DC current gain is 30 @ 30mA, 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 5mA, 50mA.Supplier device package TO-92 (TO-226) comes with the product.The device exhibits a collector-emitter breakdown at 350 V.
2N6520RL1 Features
the DC current gain for this device is 30 @ 30mA, 10V
the vce saturation(Max) is 1V @ 5mA, 50mA
the supplier device package of TO-92 (TO-226)
2N6520RL1 Applications
There are a lot of Motorola
2N6520RL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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