General Semiconductor 2N6233

Manufacturer No:

2N6233

Manufacturer:

General Semiconductor

Package:

TO-213AA, TO-66-2

Description:

NPN -65°C ~ 200°C (TJ) 1mA TO-213AA, TO-66-2 Through Hole

Quantity:

Delivery:

Payment:

In Stock :Available

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2N6233 information

General Semiconductor 2N6233 technical specifications, attributes, parameters and parts with similar specifications to General Semiconductor 2N6233.

Type
Parameter

Package / Case
TO-213AA, TO-66-2

Mounting Type
Through Hole

Supplier Device Package
TO-66

Product Status
Active

Package
Bulk

Mfr
General Semiconductor

Operating Temperature
-65°C ~ 200°C (TJ)

Power - Max
50 W

Transistor Type
NPN

DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A, 5V

Current - Collector Cutoff (Max)
1mA

Vce Saturation (Max) @ Ib, Ic
2.5V @ 1A, 5A

Voltage - Collector Emitter Breakdown (Max)
225 V

Current - Collector (Ic) (Max)
5 A

Download datasheets and manufacturer documentation for General Semiconductor 2N6233.

2N6233 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A, 5V.When VCE saturation is 2.5V @ 1A, 5A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-66 contains the product.The device has a 225 V maximal voltage - Collector Emitter Breakdown.

2N6233 Features

the DC current gain for this device is 10 @ 3A, 5V
the vce saturation(Max) is 2.5V @ 1A, 5A
the supplier device package of TO-66

2N6233 Applications

There are a lot of General Semiconductor
2N6233 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

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