ONSEMI 2N5830
ONSEMI 2N5830

ONSEMI 2N5830

Manufacturer No:

2N5830

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA)

Description:

NPN -55°C~150°C TJ 50nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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2N5830 information

ONSEMI 2N5830 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2N5830.

  • Type
  • Parameter
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
  • 3
  • Supplier Device Package
  • TO-92-3
  • Weight
  • 201mg
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Bulk
  • Published
  • 1997
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Max Operating Temperature
  • 150°C
  • Min Operating Temperature
  • -55°C
  • Voltage - Rated DC
  • 100V
  • Max Power Dissipation
  • 625mW
  • Current Rating
  • 200mA
  • Base Part Number
  • 2N5830
  • Number of Elements
  • 1
  • Polarity
  • NPN
  • Element Configuration
  • Single
  • Power Dissipation
  • 625mW
  • Power - Max
  • 625mW
  • Transistor Type
  • NPN
  • Collector Emitter Voltage (VCEO)
  • 100V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 80 @ 10mA 5V
  • Current - Collector Cutoff (Max)
  • 50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 250mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
  • 100V
  • Voltage - Collector Emitter Breakdown (Max)
  • 100V
  • Current - Collector (Ic) (Max)
  • 200mA
  • Collector Emitter Saturation Voltage
  • 250mV
  • Collector Base Voltage (VCBO)
  • 120V
  • Emitter Base Voltage (VEBO)
  • 5V
  • hFE Min
  • 80
  • RoHS Status
  • RoHS Compliant
  • Lead Free
  • Lead Free

Download datasheets and manufacturer documentation for ONSEMI 2N5830.

Datasheets:

ReachStatement:

2N5830 Overview


DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 5mA, 50mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 200mA current rating.Product comes in TO-92-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 200mA volts.

2N5830 Features


the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
the supplier device package of TO-92-3


2N5830 Applications


There are a lot of ON Semiconductor
2N5830 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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