ONSEMI 2N5551RLRM
ONSEMI 2N5551RLRM

ONSEMI 2N5551RLRM

Manufacturer No:

2N5551RLRM

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Description:

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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2N5551RLRM information

ONSEMI 2N5551RLRM technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2N5551RLRM.

  • Type
  • Parameter
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Box (TB)
  • Published
  • 2006
  • JESD-609 Code
  • e0
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Tin/Lead (Sn/Pb)
  • HTS Code
  • 8541.21.00.95
  • Subcategory
  • Other Transistors
  • Voltage - Rated DC
  • 160V
  • Max Power Dissipation
  • 625mW
  • Terminal Position
  • BOTTOM
  • Peak Reflow Temperature (Cel)
  • 240
  • Reach Compliance Code
  • not_compliant
  • Current Rating
  • 600mA
  • Time@Peak Reflow Temperature-Max (s)
  • 30
  • Base Part Number
  • 2N5551
  • Pin Count
  • 3
  • Qualification Status
  • Not Qualified
  • Number of Elements
  • 1
  • Element Configuration
  • Single
  • Transistor Application
  • AMPLIFIER
  • Gain Bandwidth Product
  • 300MHz
  • Polarity/Channel Type
  • NPN
  • Transistor Type
  • NPN
  • Collector Emitter Voltage (VCEO)
  • 200mV
  • Max Collector Current
  • 600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 80 @ 10mA 5V
  • Current - Collector Cutoff (Max)
  • 50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 200mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
  • 160V
  • Transition Frequency
  • 100MHz
  • Collector Emitter Saturation Voltage
  • 250mV
  • Collector Base Voltage (VCBO)
  • 180V
  • Emitter Base Voltage (VEBO)
  • 6V
  • hFE Min
  • 80
  • RoHS Status
  • RoHS Compliant
  • Lead Free
  • Contains Lead

Download datasheets and manufacturer documentation for ONSEMI 2N5551RLRM.

Datasheets:

PCN Obsolescence/ EOL:

ReachStatement:

2N5551RLRM Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 600mA volts.

2N5551RLRM Features


the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz


2N5551RLRM Applications


There are a lot of ON Semiconductor
2N5551RLRM applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

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Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

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Step6：Packaging Box

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DELIVERY TIME

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2. For in-stock parts, orders normally could be shipped out within 1-2days.

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