ONSEMI 2N5550RLRAG

Manufacturer No:

2N5550RLRAG

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Description:

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

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2N5550RLRAG information

ONSEMI 2N5550RLRAG technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2N5550RLRAG.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2006

JESD-609 Code
e1

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)

Subcategory
Other Transistors

Voltage - Rated DC
140V

Max Power Dissipation
625mW

Terminal Position
BOTTOM

Peak Reflow Temperature (Cel)
260

Current Rating
600mA

Frequency
300MHz

Time@Peak Reflow Temperature-Max (s)
40

Base Part Number
2N5550

Pin Count
3

Number of Elements
1

Element Configuration
Single

Power Dissipation
625mW

Transistor Application
AMPLIFIER

Gain Bandwidth Product
300MHz

Polarity/Channel Type
NPN

Transistor Type
NPN

Collector Emitter Voltage (VCEO)
140V

Max Collector Current
600mA

DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V

Current - Collector Cutoff (Max)
100nA ICBO

Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 50mA

Collector Emitter Breakdown Voltage
140V

Transition Frequency
100MHz

Collector Emitter Saturation Voltage
250mV

Collector Base Voltage (VCBO)
160V

Emitter Base Voltage (VEBO)
6V

hFE Min
60

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for ONSEMI 2N5550RLRAG.

2N5550RLRAG Overview

This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 600mA volts is possible.

2N5550RLRAG Features

the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz

2N5550RLRAG Applications

There are a lot of ON Semiconductor
2N5550RLRAG applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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IMPORTANT NOTICE

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SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.