Microchip 2N5411

Manufacturer No:

2N5411

Manufacturer:

Microchip

Package:

TO-111-4, Stud

Description:

PNP -65°C ~ 200°C (TJ) - TO-111-4, Stud Stud Mount

Quantity:

In Stock :1736

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

2N5411 Information

Microchip 2N5411 technical specifications, attributes, parameters and parts with similar specifications to Microchip 2N5411.

Type
Parameter

Mounting Type
Stud Mount

Package / Case
TO-111-4, Stud

Supplier Device Package
TO-111

Mfr
Microchip Technology

Package
Bulk

Product Status
Active

Operating Temperature
-65°C ~ 200°C (TJ)

Power - Max
52 W

Transistor Type
PNP

Vce Saturation (Max) @ Ib, Ic
600mV @ 200?A, 2mA

Type
Parameter

Voltage - Collector Emitter Breakdown (Max)
100 V

Current - Collector (Ic) (Max)
5 A

Download datasheets and manufacturer documentation for Microchip 2N5411.

2N5411 Overview

In this device, the DC current gain is -, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 200?A, 2mA.Product comes in the supplier's device package TO-111.There is a 100 V maximal voltage in the device due to collector-emitter breakdown.