ONSEMI 2N5401ZL1
ONSEMI 2N5401ZL1

ONSEMI 2N5401ZL1

Manufacturer No:

2N5401ZL1

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Description:

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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2N5401ZL1 information

ONSEMI 2N5401ZL1 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2N5401ZL1.

  • Type
  • Parameter
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Box (TB)
  • Published
  • 2005
  • JESD-609 Code
  • e0
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Tin/Lead (Sn/Pb)
  • Additional Feature
  • EUROPEAN PART NUMBER
  • HTS Code
  • 8541.21.00.95
  • Subcategory
  • Other Transistors
  • Voltage - Rated DC
  • -150V
  • Max Power Dissipation
  • 625mW
  • Terminal Position
  • BOTTOM
  • Peak Reflow Temperature (Cel)
  • 240
  • Reach Compliance Code
  • not_compliant
  • Current Rating
  • -600mA
  • Time@Peak Reflow Temperature-Max (s)
  • 30
  • Base Part Number
  • 2N5401
  • JESD-30 Code
  • O-PBCY-T3
  • Qualification Status
  • Not Qualified
  • Number of Elements
  • 1
  • Element Configuration
  • Single
  • Transistor Application
  • AMPLIFIER
  • Gain Bandwidth Product
  • 300MHz
  • Polarity/Channel Type
  • PNP
  • Transistor Type
  • PNP
  • Collector Emitter Voltage (VCEO)
  • 500mV
  • Max Collector Current
  • 600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 60 @ 10mA 5V
  • Current - Collector Cutoff (Max)
  • 50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 500mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
  • 150V
  • Current - Collector (Ic) (Max)
  • 600mA
  • Transition Frequency
  • 100MHz
  • Collector Emitter Saturation Voltage
  • 500mV
  • Collector Base Voltage (VCBO)
  • 160V
  • Emitter Base Voltage (VEBO)
  • 5V
  • hFE Min
  • 50
  • RoHS Status
  • RoHS Compliant
  • Lead Free
  • Contains Lead

Download datasheets and manufacturer documentation for ONSEMI 2N5401ZL1.

Datasheets:

PCN Obsolescence/ EOL:

ReachStatement:

2N5401ZL1 Overview


In this device, the DC current gain is 60 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).100MHz is present in the transition frequency.Maximum collector currents can be below 600mA volts.

2N5401ZL1 Features


the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz


2N5401ZL1 Applications


There are a lot of ON Semiconductor
2N5401ZL1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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Step2：Desiccant Protection

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Step3：Vacuum Packaging

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Step4：Individual Package

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Step5：Anti-collision Filling

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