ONSEMI 2N5401ZL1
Manufacturer No:
2N5401ZL1
Manufacturer:
Package:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description:
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
Quantity:
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2N5401ZL1 Information
ONSEMI 2N5401ZL1 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2N5401ZL1.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Box (TB)
- Published
- 2005
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- Additional Feature
- EUROPEAN PART NUMBER
- HTS Code
- 8541.21.00.95
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -150V
- Max Power Dissipation
- 625mW
- Terminal Position
- BOTTOM
- Peak Reflow Temperature (Cel)
- 240
Download datasheets and manufacturer documentation for ONSEMI 2N5401ZL1.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
2N5401ZL1 Overview
In this device, the DC current gain is 60 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).100MHz is present in the transition frequency.Maximum collector currents can be below 600mA volts.
2N5401ZL1 Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz
2N5401ZL1 Applications
There are a lot of ON Semiconductor
2N5401ZL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
2N5401ZL1 Relevant information
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