Microchip 2N5339QFN

Manufacturer No:

2N5339QFN

Manufacturer:

Microchip

Package:

TO-205AD, TO-39-3 Metal Can

Description:

NPN -55°C ~ 200°C 100?A TO-205AD, TO-39-3 Metal Can Through Hole

Quantity:

In Stock :8953

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

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Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

2N5339QFN Information

Microchip 2N5339QFN technical specifications, attributes, parameters and parts with similar specifications to Microchip 2N5339QFN.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-205AD, TO-39-3 Metal Can

Supplier Device Package
TO-39 (TO-205AD)

Mfr
Microchip Technology

Package
Bulk

Product Status
Active

Operating Temperature
-55°C ~ 200°C

Power - Max
1 W

Transistor Type
NPN

DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 2A, 2V

Type
Parameter

Current - Collector Cutoff (Max)
100?A

Vce Saturation (Max) @ Ib, Ic
1.2V @ 500mA, 5A

Voltage - Collector Emitter Breakdown (Max)
100 V

Current - Collector (Ic) (Max)
5 A

Download datasheets and manufacturer documentation for Microchip 2N5339QFN.

2N5339QFN Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 2A, 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 500mA, 5A.TO-39 (TO-205AD) is the supplier device package for this product.This device displays a 100 V maximum voltage - Collector Emitter Breakdown.