ONSEMI 2N5210TFR
Manufacturer No:
2N5210TFR
Manufacturer:
ONSEMI
Package:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description:
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
Quantity:
In Stock :1252
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 8 - Tue, Jun 9, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
2N5210TFR Information
ONSEMI 2N5210TFR technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2N5210TFR.
- Type
- Parameter
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Factory Lead Time
- 2 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins
- 3
- Weight
- 240mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Type
- Parameter
- Published
- 2002
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Subcategory
- Other Transistors
- Voltage - Rated DC
- 50V
Download datasheets and manufacturer documentation for ONSEMI 2N5210TFR.
Datasheets:
PCN Design/Specification:
PCN Packaging:
2N5210TFR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100?A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4.5V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 30MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 100mA volts.
2N5210TFR Features
the DC current gain for this device is 200 @ 100?A 5V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 100mA
a transition frequency of 30MHz
2N5210TFR Applications
There are a lot of ON Semiconductor
2N5210TFR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
Listed Part Number
3,000+
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